Transistor

A950 PDF Datasheet – 30V, 0.8A, PNP Transistor, 2SA950

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Part Number: A950, 2SA950

Function: -30V, -800mA, PNP Transistor

Package: TO-92 type

Manufacturer: Toshiba

Images:

A950 pnp transistor

Description

This is -30V, -800mA, Silicon -30V, -800mA, Silicon PNP Transistor.

Features

1. High hFE: hFE = 100~320

2. 1 W output applications

3. Complementary to 2SC2120

Maximum Ratings (Ta = 25°C)

1. Collector-base voltage : VCBO :  -35 V
2. Collector-emitter voltage : VCEO : -30 V
3. Emitter-base voltage : VEBO = -5 V
4. Collector current : IC = -800 mA
4. Base current : IB = -160 mA
5. Collector power dissipation : PC = 600 mW
6. Junction temperature : Tj = 150 °C
7. Storage temperature range : Tstg = -55~150 °C

Pinout

A950 datasheet pinout

Applications

1. Audio Power Amplifier

A950 Datasheet

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RJP30E2 Datasheet PDF – RJP30E2DPK-M0, 360V, 35A, IGBT

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This is one of the semiconductor types.

Part Number: RJP30E2, RJP30E2DPK-M0

This product has Silicon N-Channel 360V, 35A, IGBT High Speed Power Switching functions.

Package: TO-220FL Type

The manufacturer of the product is Renesas Electronics.

See the preview image and the PDF file for more information.

Image and Pinouts:
RJP30E2

Description

This is 360V, 35A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max

RJP30E2 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30E2 Datasheet PDF

RJP30E2DPK-M0 pdf

Other data sheets are available within the file: RJP30E2DPK-M0, RJP30E2DPK-M0-T0