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Features

1. Monolithic Planar Die

2. Contact Metallization

3. Base and Emitter : Aluminum

4. Collector : Titanium, Nickel Silver

5. Die Size : 220 x .185 x .010 inch

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 450 V

2. Collector to Emitter Voltage: Vceo = 450 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 20 A

Other data sheets are available within the file: OTC1015, OTC6030, OTC-6050

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: FQP50N06L

Function: N-Channel QFET MOSFET ( 60 V, 52.4 A, 21 mΩ )

Package: TO-220 Tyoe

Manufacturer: Fairchild Semiconductor

FQP50N06L Pinout

FQP50N06L datasheet

Description

The FQP50N06L is 60V, 52.4A, N-Channel MOSFET.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching power applications.

Features

1. 52.4 A, 60 V, Rds(on)= 21 mΩ(Max.) @ Vgs= 10V Id= 26.2 A

2. Low Gate Charge (Typ. 24.5 nC)

3. Low Crss (Typ. 90 pF)

4. 100% Avalanche Tested

5. 175°C Maximum Junction Temperature Rating

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 52.4 A (Tc = 25°C)

4. Power Dissipation: Pd = 121 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: 50N06L

Transistor

OTC6050 Datasheet PDF – 450V, 20A, NPN Transistor

Description

Features

OTC6050 Datasheet PDF Download

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FQP50N06L Datasheet – N-Ch, 60V, MOSFET (Transistor)

Description

Features

FQP50N06L Datasheet PDF