Transistor

1D0N60 Datasheet – 600V,1A, MOSFET, Transistor ( PDF )

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Part Number: 1D0N60

Function: N-CHANNEL MOSFET / Vdss= 600V, Id = 1.0A

Package: DPAK, IPAK Type

Manufacturer: KEC Holdings

Image and Pinouts:

1D0N60 datasheet

 

Description

This is N-CHANNEL MOS FIELD EFFECT TRANSISTOR.

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Features

1. VDSS= 600V, ID= 1.0A

2. Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V

3. Qg(typ.) = 5.9nC

 

components

 

 

Other data sheets are available within the file: KHB1D0N60D, KHB1D0N60I

1D0N60 Datasheet PDF Download


1D0N60 pdf

G5N150UF Datasheet PDF – 1500V, 10A, IGBT – Fairchild

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Part Number: G5N150UF, SGS5N150UF

Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:
G5N150UF datasheet

Description

This is IGBT. Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The G5N150UF is designed for the Switching Power Supply applications.

Features

1. High Speed Switching

2. Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A

3. High Input Impedance

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1500 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 10 A

4. Maximum Power Dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Switching Power Supply

2. High Input Voltage Off-line Converter

Other data sheets are available within the file: SGS5N150UF, SGS5N150UFTU

G5N150UF Datasheet PDF

G5N150UF pdf

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