Transistor

2N5457 Datasheet PDF – N-ch, Vdg=25V, Ig=10mA, JFET

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Part Number: 2N5457

Function: Small Signal N-Channel JFET, Vdg=25V, Ig=10mA

Package: TO-92 type

Manufacturer: Fairchild Semiconductor, ON SemiConductor

Image

2N5457 transistor fairchild

Description

This is N-Channel General Purpose Amplifier.

This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications.

Pinout:

2N5457 datasheet fet

 

Features

1. N-Channel for Higher Gain

2. Drain and Source Interchangeable

3. High AC Input Impedance

4. High DC Input Resistance

5. Low Transfer and Input Capacitance

6. Low Cross-Modulation and Intermodulation Distortion

7. Plastic Encapsulated Package

8. Pb-Free Packages are Available

 

Absolute Maximum Ratings :

1. Drain-Gate Voltage : VDG = 25 V

2. Gate-Source Voltage : VGS = – 25 V

3. Forward Gate Current : IGF = 10 mA

4. Operating and Storage Junction Temperature Range : TJ, Tstg = -55 to +150 °C

5. Total Device Dissipation: Pd = 625mW

 

Official Homepage: https://www.onsemi.com/products/discrete-power-modules/jfets/2n5457

 

2N5457 Datasheet PDF

2N5457 pdf


 

H20R1202 Datasheet PDF – 1200V, 20A, IGBT – Infineon

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This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.

Part Number: IHW20N120R2

Marking : H20R1202

Package: TO-247 Type

Function: Reverse Conducting IGBT with monolithic body diode / Vce = 1200V / Ic =20A

Manufacturer: Infineon Technologies

Image and Pinouts:
H20R1202 Pinout

Description

This is a 1200V, 20A, IGBT. Reverse Conducting IGBT with monolithic body diode.

The IGBT is insulated-gate bipolar transistor.

 

Features

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• TrenchStop and Fieldstop technology for 1200 V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

 

 

Applications:

1. Inductive Cooking

2. Soft Switching Applications

 

Absolute maximum ratings ( Tc=25°C )

1. Collector-emitter voltage : Vce = 1200 V

2. DC collector current : Ic = 40 A

3. Gate-emitter voltage : Vge = ± 20 V

4. Power dissipation : Ptot = 330 W

 

H20R1202 Datasheet PDF


 

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