Transistor archives - Page 581 of 2673

Features

1. Low frequency low noise amplifier

2. HF amplefier

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = – 55 V

2. Collector to emitter voltage : VCEO = – 50 V

3. Emitter to base voltage : VEBO = – 5 V

4. Collector current : IC = – 100 mA

5. Collector power dissipation : PC = 300 mW

Other data sheets are available within the file: 2SA1337

This is one of the transistor types.

Part Number: 11N60C3

Function: 650V, Cool MOS Power Transistor

Package: TO-220FP, TO-262, TO-220 Type

Image and Pinouts:
11N60C3 datasheet

Description

This is 650V, 11A, Power MOSFET.

1. New revolutionary high voltage technology

2. Ultra low gate charge

3. Periodic avalanche rated

4. Extreme dv/dt rated

5. High peak current capability

6. Improved transconductance

7. Pb-free lead plating ( RoHS compliant )

Marking Information

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 11 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

SPP11N60C3, Q67040-S4395, Q67040-S4408, Q67042-S4403