Part Number: IXBA14N300HV

Function : IGBT NPT 3000V, 38A, 200W

Package: TO-263HV Type

Manufacturer: IXYS

Image

Description

This is 3000V, 38A, IGBT (Insulated-Gate Bipolar Transistor).

POWER DEVICES > DISCRETE IGBTs > Reverse Conducting IGBTs (BiMOSFETs) > VHV

Specifications:

1. VCES, (V) : 3000 V
2. IC25, TC=25°C, (A) : 38 A
3. IC110, TC=110°C, (A) : 14 A
4. CE(sat), max, TJ=25°C, (V) : 2.70
5. tf typ, TJ=25°C, (ns) : 1900
6. Gate drive, (V) : 15 V
7. RthJC, max, (ºC/W)    0.62

Pinout:

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 3000 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 38 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

 

Other data sheets are available within the file: IXBT14N300HV, IXBH14N300HV

 

Official Homepage: https://ixapps.ixys.com/

IXBA14N300HV Datasheet PDF

 

Related articles across the web

• Get VoCore2 Mini Linux Computer and Ultimate Dock for $42.99
• Motion-Planning Chip Speeds Robots