Transistor

02N60P PDF Datasheet – 600V, 2A, MOSFET – SSM02N60P

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This post explains for the MOSFET.

The Full Part Number is SSM02N60P, 02N60P.

The package is TO-220 type.

The function of this semiconductor is 600V, N-Channel MOSFET.

The manufacturers of this product is Silicon Standard.

See the preview image and the PDF file for more information.

 

Preview images :

1 page
02N60P transistor datasheet

Description

The 02N60P is 600V, 2A, N-Channel Power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is well suited for DC/DC and AC/DC converters in telecom, industrial and consumer applications.

Features

1. Repetitive-avalanche rated

2. Fast-switching

3. Simple drive requirement

 

02N60P mosfet pdf

Absolute Maximum Ratings :

1. Drain-Source Voltage : VDS = 600 V

2. Gate-Source Voltage : VGS = ± 20 V

3. Drain current: ID = 2 A

4. Total Power Dissipation: Pd = 39 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Notes:

1. Pulse width limited by safe operating area.

2. Starting Tj=25oC , VDD=50V , L=60mH , RG=25Ω , IAS=2A.

3. Pulse width <300us , duty cycle <2%.

 

02N60P PDF Datasheet

K40T1202 PDF Datasheet – 1200V, 40A, IGBT – Infineon

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This post explains for the semiconductor K40T1202.

The Full Part Number is IKW40N120T2. The package is TO-247 type

The function of this semiconductor is 1200V, 40A, IGBT.

The manufacturers of this product is Infineon.

See the preview image and the PDF file for more information.

Preview images :

1 page
K40T1202 pdf pinout

Description

K40T1202 is 1200V, 40A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Short circuit withstand time – 10us

2. Designed for :

– Frequency Converters

– Uninterrupted Power Supply

3. TrenchStop 2nd generation for 1200 V applications offers :

– very tight parameter distribution

– high ruggedness, temperature stable behavior

4. Easy paralleling capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

6. Low Gate Charge

7. Very soft, fast recovery anti-parallel Emitter Controlled HEDiode

8. Qualified according to JEDEC1 for target applications

9. Pb-free lead plating; RoHS compliant

 

2 page
transistor K40T1202 equivalent

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage: Vces = 1200 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 40 A

4. Power Dissipation: Ptot = 480 W

5. Operating Junction Temperature: Tch = -40 to +175 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

K40T1202 PDF Datasheet