A1015 PNP Transistor – 150mA, 50V, TO-92, 2SA1015

The A1015 PNP transistor has a maximum current rating of 150mA, which means it can handle up to 150 milliamps of current flowing through the transistor.

Part Number: A1015

Function: -150mA, -50V, PNP General Purpose Transistor

Package: TO-92 Type

Manufacturer: Toshiba

Image :
A1015 image, 2SA1015 image

Description

This a PNP transistor, which means it is designed to allow current to flow from the emitter to the collector when a positive voltage is applied to the base. It is commonly used for small-signal amplification and switching applications.

The A1015 transistor has three pins: the emitter, base, and collector. The emitter is the pin closest to the flat side of the transistor, the base is the middle pin, and the collector is the pin farthest from the flat side. The pinout can also be identified by looking at the datasheet of the transistor.

Features

0. Frequency range: The A1015 transistor can operate over a wide frequency range of up to 150MHz. This makes it suitable for use in a variety of applications, including high-frequency amplification, oscillators, and mixers.

1. High voltage and high current : VCEO = -50 V (min),  IC = -150 mA (max)

2. Excellent hFElinearity :

(1) hFE (2)= 80 (typ.) at VCE= -6 V, IC= -150 mA

(2) hFE(IC= -0.1 mA)/hFE(IC= -2 mA) = 0.95 (typ.)

3. Low noise: NF = 1dB (typ.) (f = 1 kHz)

4. Complementary to 2SC1815.

Pinout

A1015 Datasheet PDF Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-base voltage : VCBO = -50 V

2. Collector-emitter voltage : VCEO = -50 V

3. Emitter-base voltage : VEBO = -5 V

4. Collector current : IC = -150 mA

5. Base current : IB = -50 mA

6. Collector power dissipation : PC = 400 mW

7. Function temperature : Tj = 125 °C

8. Storage temperature range : Tstg = -55~125 °C

Applications:

1. Amplifier in audio and radio frequency circuits.

2. Switch in electronic circuits, such as in relay and motor control circuits.

3. Oscillator circuits to generate high-frequency signals.

4. Audio Frequency General Purpose Amplifier

5.  Driver Stage Amplifier

 

Disadvantages of A1015 transistor

1. Limited current and voltage rating: The maximum current and voltage ratings of these transistors are typically lower than those of power transistors, which may limit their use in high-power applications.

2. Temperature sensitivity: PNP transistors can be sensitive to temperature changes, which can affect their performance in electronic circuits.

3. Noise: PNP transistors can introduce noise into electronic circuits, which may be undesirable in some applications.

4. Beta Variation: Beta or hFE value variation can affect the performance of the circuit, requiring careful selection of the transistor or circuit design.

A1015 Transistor Informations

A1015 pdf

Posts related to ‘ 2SA ~ ‘

Part number Description
2SA1273 30V, 2A, PNP Transistor – KEC
2SA1052 30V, 100mA, PNP Transistor, A1052
2SA1225 160V, 1.5A, PNP Transistor, A1225
2SA836 55V, 100mA, PNP Transistor
2SA1122 2SA1122 Transistor – 55V, 100mA, PNP ( Datasheet PDF )
2SA1406 2SA1406 Transistor – 200V, 100mA, PNP ( Datasheet PDF )
2SA1117 200V, 17A, PNP, Transistor, A1117
2SA1036K 32V, 500mA, PNP, Transistor – Rohm
2SA1302 (-)200V, PNP Transistor ( PDF )
2SA1084 2SA1084 Transistor – 90V, 100mA, PNP ( Datasheet PDF )

 

K1118 PDF Datasheet – N-Ch, 600V, 6A, MOSFET – 2SK1118

The Full Part Number is 2SK1118.

The function of this semiconductor is 600V, Silicon N Channel MOSFET.

The package is TO-220 Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K1118 transistor pinout

Description

The K1118 is 600V, Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. 4-Volt Gate Drive

2. Low Drain-Source ON Resistance – Rds(on) = 0.95 Ohm ( Typ. )

3. High Forward Transfer Admittance

4. Low Leakage Current

5. Enhancement-Mode

K1118 pdf datasheet

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-Source Voltage : Vdss = 600V

2. Drain-Gate Voltage : Vdgr = 600V

3. Gate-Source Voltage : Vgss = ± 30V

4. Drain Current : Id =6 A

4. Drain Power Dissipation: Pd = 45 W ( Tc = 25°C )

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed, High Current DC-DC Converter

2. Relay Drive and Motor Drive

K1118 PDF Datasheet


 

Posts related to ‘ 600V MOSFET ‘

Part number Description
STW20NM60 600V, N-Ch, MOSFET
7N60 600V, 7A, N-Ch, MOSFET
K3569 600V, 10A, MOSFET, Transistor
SPW47N60CFD 600V, 46A, MOSFET
K1404 600V, 5A, N-Ch, MOSFET – Renesas
K15A60U N-Ch, 600V, 15A, MOSFET
K8A60DA 600V, Nch MOSFET – Toshiba
IRFRC20 600V, 2A, Power MOSFET ( PDF )
STP8NC60FP 600V, 7A, N-Ch, MOSFET – ST
K3567 600V, MOSFET – 2SK3567 Transistor

 

Related articles across the web