K4108 Datasheet – 500V, N-Ch MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K4108, 2SK4108

Description

Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor

Package: TO-3P type

Manufacturer: Toshiba

Image
K4108 mosfet
Description

1. Low drain−source ON resistance  : RDS (ON)= 0. 21Ω(typ.)
2. High forward transfer admittance  : |Yfs| = 14 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 500 V)
4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Applications

1. Switching Regulator

Pinout

K4108 datasheet pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain source voltage: VDSS = 500 V
2. Drain gate voltage (RGS = 20 kΩ): VDGR = 500 V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 150 W
5. Single-pulse avalanche energy : EAS = 960 mJ
6. Avalanche current : IAR = 20 A
7. Repetitive avalanche energy : EAR = 15 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

K4108 Datasheet


 

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2SK3919 Datasheet PDF – 25V, 64A, N-Ch, MOSFET

Part Number: 2SK3919

Function: 64A, 25V, SWITCHING N-CHANNEL POWER MOSFET

Package: TO-251, TO-252 Type

Manufacturer: NEC ( Renesas Technology )

Pinouts:

2SK3919 datasheet

Description

The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. Low on-state resistance : RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
2. Low Ciss: Ciss = 2050 pF TYP.
3. 5 V drive available

Ordering Inforamtion

components

Absolute maximum ratings ( Ta=25°C )

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±64 A
4. Drain Current (pulse) : ID(pulse) = ±256 A
5. Total Power Dissipation (TC = 25°C) : PT1 = 36 W
6. Total Power Dissipation : PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150 °C
9. Single Avalanche Current : IAS = 27 A
10. Single Avalanche Energy : EAS = 73 mJ

Other data sheets are available within the file: 2SK3919-ZK, K3919, K3919-ZK

2SK3919 Datasheet PDF Download


2SK3919 pdf