G4PH40UD2-E Datasheet PDF – 1.2kV, 41A, IGBT, Transistor

Part Number: G4PH40UD2-E

Function: 1.2kV, 41A, IGBT

Package: TO-247AD Type

Manufacturer: International Rectifier

Image and Pinouts:

G4PH40UD2-E datasheet

 

Description

The G4PH40UD2-E is 1.2kV, 41A, IGBT With Ultrafast soft Recovery Diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

IGBTs are widely used in power electronic applications, such as motor drives, renewable energy systems, and power conversion systems, due to their high efficiency, fast switching speed, and low switching losses.

Features

1. UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode.

2. IGBT co-packaged with HEXFRED ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits

Applications:

1. Induction cooking systems

2. Microwave Ovens

3. Resonant Circuits

Other data sheets are available within the file:

IRG4PH40U, IRG4PH40UD, IRG4PH40UD2-E

 

G4PH40UD2-E Datasheet PDF Download


G4PH40UD2-E pdf

C3421 Datasheet PDF – 120V, 1A, NPN Transistor – Toshiba

Part Number: C3421, 2SC3421

Function: 120V, 1A, NPN Transistor

Package: TO-126 Type

Manufacturer: Toshiba

Image
C3421 transistor

Description

The C3421 is 120V, 1A, Silicon NPN Epitaxial Type Transistor ( PCT Process ).

Features

1. Complementary to 2SA1358

2. Suitable for Driver of 60 to 80 Watts Audio Amplifer

3. High Breakdown Voltage

 

Pinout

C3421 datasheet pinout

 

Maxmimum Ratings ( Ta = 25°C )

1. Collector-Base Voltage: Vcbo = 120V

2. Collector-Emitter Voltage: Vceo = 120V

3. Emitter-Base Voltage: Vebo = 5V

4. Collector Current: Ic = 1A

5. Base Current : Ib = 100mA

 

Applications:

1. Audio Frequency Power Amplifier

 

C3421 Datasheet PDF


 

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