Part Number: SVF13N50F, SVF13N50T, SVF13N50PN

Function: 13A, 500V, N-Channel MOSFET ( Enhanced Field Effect Transistor )

Pacakge : TO 220F-3L Type

Manufacturer: Silan Microelectronics

Image

Description

The SVF13N50F N-Channel Enhanced High-Voltage Power MOS Field Effect Transistor is fabricated using SL’s F-CellTM planar high-voltage VDMOS process technology. The advanced process and strip cell design make the product have low conduction resistance, superior switching performance and high avalanche breakdown resistance. This product can be widely used in AC-DC switching power supply, DC-DC power converter, high voltage H-bridge PWM motor drive.

Pinout

Features

1. 13A, 500V, RDS (ON) (typical) = 0.44 Ω @ VGS = 10V
2. Low gate charge
3. Low reverse transfer capacitance
4. Fast switching
5. Improved dv/dt capabilities

 

SVF13N50F Datasheet PDF Download

Related articles across the web

• You Can Have my TIPs When You Pry them from my Cold, Dead Hands

Part Number: K2983

Function: 30V, 30A, N-Channel MOS FIELD EFFECT TRANSISTOR

Package: TO-220AB Type

Manufacturer: Renesas Electronics

Pinouts:

 

Description

The K2983 is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1. Low on-resistance
RDS(on)1= 20 mΩ MAX. (VGS= 10 V, ID= 15 A)
RDS(on)2= 27 mΩ MAX. (VGS= 4.5 V, ID= 15 A)
2. Low CissCiss= 1300 pF TYP.
3. Built-in gate protection diode

Absolute Maximum Ratings

1. Drain to Source Voltage : VDSS = 30 V
2. Gate to Source Voltage : VGSS = ±20 V
3. Drain Current (DC) : ID(DC) = ±30 A
4. Drain Current (pulse) :  ID(pulse) = ±120 A
5. Total Power Dissipation (TA = 25°C) : PT = 1.5 W

Other data sheets are available within the file:

2SK2983 : TO-220AB

2SK2983-S : TO-262

2SK2983-ZJ : TO-263

K2983 Datasheet PDF