IRFZ44 Datasheet – 60V, 50A, Power MOSFET, Transistor

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRFZ44

Function : 60V, 50A, Power MOSFET

Package: TO-220AB Type

Manufacturer: Vishay

Image

irfz44-power-mosfet

Description

This is 60V, 50A, HEXFET Power MOSFET.

Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching, ruggedized device design, low on-resistance andcost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistancean and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

IRFZ44 Pinout

irfz44-datasheet-pinout

 

Features

1. Dynamic dV/dt Rating

2. 175 °C Operating Temperature

3. Fast Switching

4. Ease of Paralleling

5. Simple Drive Requirements

6. Compliant to RoHS Directive 2002/95/EC

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

IRFZ44 Datasheet


 

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B1399 Datasheet PDF – 10A, 120V, PNP Transistor, 2SB1399

Part Number: B1399

Function:  -10A, -120V, PNP Transistor

Package: TO-220FM Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:

B1399 datasheet

 

Description

This is -120V, -10A, Silicon PNP Triple Diffused Transistor.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = – 120 V

2. Collector to emitter voltage : VCEO = – 120 V

3. Emitter to base voltage : VEBO = – 7 V

4. Collector current : IC = – 10 A

5. Collector peak current : IC(peak) = – 12 A

6. Collector power dissipation : PC = 2 W

 

 

components

Application:

1. Low frequency power amplifier

Other data sheets are available within the file: 2SB1399

B1399 Datasheet PDF Download

B1399 pdf

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