Transistor

K2718 Datasheet – 900V, N-Ch MOSFET – Toshiba

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K2718 is one of the types of MOSFETs and is a kind of transistor.

Part Number: 2SK2718

Function: Silicon N Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

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K2718 mosfet

Description

The K2718 is a high-voltage N-channel MOSFET designed for power switching applications, featuring a 900V drain-source rating and 2.5A current capability in a robust package. It offers moderate RDS(ON), high forward transfer admittance, and low leakage current, making it suitable for efficient high-voltage operation. This device is commonly used in DC-DC converters, motor drives, and other high-voltage switching circuits.

Features

  • High drain-source voltage rating up to 900V
  • Low RDS(ON) of approximately 5.6Ω (typ.)
  • High forward transfer admittance |Yfs| of 2.0S (typ.)
  • Low leakage current IDSS up to 100µA at high voltage
  • Enhancement mode operation with Vth between 2.0V and 4.0V
  • Suitable for high-voltage switching applications

Pinout

K2718 datasheet pinout

Design Notes

  • High RDS(ON) compared to low-voltage MOSFETs requires careful efficiency consideration
  • Gate drive voltage should be sufficiently high to fully enhance the device
  • Suitable for high-voltage applications but switching losses must be evaluated
  • Ensure proper heat sinking for sustained operation near maximum power
  • Avalanche rating allows limited inductive load handling without external protection

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 900 V
Drain-Gate Voltage VDGR 900 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 2.5 A
Power Dissipation PD 40 W
Single Pulse Avalanche Energy EAS 216 mJ

How to Choose This Part

  • Select for high-voltage applications requiring up to 900V blocking capability
  • Suitable for moderate current switching applications
  • Evaluate conduction losses due to relatively high RDS(ON)
  • Ensure compatibility with available gate drive circuitry
  • Consider switching frequency and thermal constraints

Applications

  • DC-DC converters
  • Motor drive systems
  • Switch-mode power supplies
  • Industrial power control circuits
  • High-voltage switching systems

Alternative / Equivalent Products

  • STP9NK90Z 900V N-channel MOSFET
  • FQP9N90C high-voltage MOSFET
  • IRF840 500V MOSFET for lower voltage applications
  • TK10A90D super junction MOSFET
  • IXTP2N100D high-voltage MOSFET alternative

K2718 Datasheet

D2634 Datasheet PDF – 800V, 8A, NPN Transistor – Sanyo

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Part Number: D2634, 2SD2634

Function : NPN Triple Diffused Planar Silicon Transistor

Package: TO-3PMLH Type

Manufacturer: Sanyo Semicon Device

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D2634 datasheet pinout

Description

This is NPN Triple Diffused Planar Silicon Transistor.

The D2634 is a NPN bipolar junction transistor (BJT) manufactured by Sanyo, Toshiba. BJTs are widely used as amplifiers and switches in a variety of electronic circuits, including audio amplifiers, power amplifiers, and switching regulators.

Features

1. High speed.

2. High breakdown voltage(VCBO=1500V).

3. High reliability(Adoption of HVP process).

4. Adoption of MBIT process.

5. On-chip damper diode.

Pinout

D2634 transistor

Absolute Maximum Ratings

1. Collector-to-Base Voltage : VCBO = 1500 V

2. Collector-to-Emitter Voltage : VCEO = 800 V

3. Emitter-to-Base Voltage : VEBO = 6V

4. Collector Current : IC = 8A

Applications:

1. Color TV Horizontal Deflection Output

D2634 Datasheet PDF


 

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