MIP3E3SMY Datasheet PDF – 700V, MOSFET – Panasonic

Part Number: MIP3E3SMY

Function: Intelligent Power Devices / Silicon MOS type integrated circuit

Package: TO-220 Type

Manufacturer: Panasonic Corporation

Image:

MIP3E3SMY Image

Description

This is 700V, 1.1A, MOSFET.

Features

1. Supports worldwide input, further reducing power consumption at light loads
(Up to 50% less than MIP2ExD series)

2. various protection circuit Built by possible real-time protection

3. Internal soft-start

Absolute maximum rating :

1. Drain Voltage : VD = 700 V

2. Control Voltage : VC = 8 V

3. Drain Current : ID = 1.1 A

4. Peak Drain Current : IDP = 1.7 A

5. Control Current : IC = 0.1 A

6. Channel Temperature : Tch = 150 ° C

7. Storage Temperature : Tstg = -55 to + 150 ° C

Pinout

MIP3E3SMY Datasheet

Application:

1. For switching power control

2. AC-DC converter

3. Power supply IC

Block Diagram :

MIP3E3SMY Pinouts

MIP3E3SMY Datasheet PDF Download

MIP3E3SMY pdf


 

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IXFH26N60 Datasheet PDF – 600V, 26A, Power MOSFET

Part Number: IXFH26N60, IXFT26N60

Function: 600V, 26A, HiPerFET Power MOSFET

Package: TO-247AD

Manufacturer: IXYS

Image :

ixfh26n60-mosfet

Description

This is 600V, 26A, HiPerFET Power MOSFET and N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr.

Features

1. International standard packages
2. EpoxymeetUL94V-0, flammability classification
3. Low RDS (on) HDMOSTM process
4. Rugged polysilicon gate cell structure
5. Avalanche energy and current rated
6. Fast intrinsic Rectifier

Pinout

ixfh26n60-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 26 A
4. Drain Power Dissipation: Pd = 360 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Advantages :

1. Easy to mount
2. Space savings
3. High power density

IXFH26N60 Datasheet


 

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