Semiconductor Informations
Part Number: 2N930
Function: NPN LOW POWER SILICON TRANSISTOR
Package: TO-18, TO-206AA Type
Manufacturer: Microsemi Corporation
Image and Pinouts:
Maximum Ratings
1. Collector-Emitter Voltage : VCEO = 45 Vdc
2. Collector-Base Voltage : VCBO = 60 Vdc
3. Emitter-Base Voltage : VEBO = 6.0 Vdc
4. Collector Current : IC = 30 mAdc
5. Total Power Dissipation : Pt = 300 mW
Other data sheets are available within the file: JAN2N930, JANTX2N930, JANTXV2N930
Part Number: K4111, 2SK4111
Function: 600V, 10A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image
The K4111 is 600V, 10A, Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor.
In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.
1. Low drain-source ON resistance: RDS (ON)= 0.54 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 8.5S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
