Transistor

C3890 PDF Datasheet – Vceo=400V, 7A, NPN Transistor

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This post explains for the transistor.

The Part Number is C3890, 2SC3890.

The function of this semiconductor is 400V, 7A, NPN Transistor.

The package is TO-220F Type

Manufacturer: Sanken electric

Preview images :

C3890 transistor

Description

The C3890 transistor is Silicon NPN Triple Diffused Planar Transistor.

This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features

1. High Voltage and High Speed Switchihg Transistor

1 page
C3890 pdf datasheet

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 7 A

5. Collector Dissipation : Pc = 30 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Application:

1. Switching Regulator and General Purpose

 

C3890 Transistor Datasheet

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K2638 PDF Datasheet – N-Ch, 450V, 10A, MOSFET- 2SK2638

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The K2638 is one of the N-Channel MOSFET types.

The full partnubmer is 2SK2638.

The package is TO-220F15 type.

This product has 450V, 10A, 50W, N-Channel MOSFET functions.

The manufacturers of this product is Fuji Electric.

See the preview image and the PDF file for more information.

Images:

1 page
K2638 pdf datasheet

Description

This is 450V, 10A, N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. High Speed Switching

2. Low On-Resistance

3. No Secondary Breakdown

4. Low Driving Power

5. High Voltage

6. VGS = ± 30V Guarantee

7. Repetitive Avalanche Rated

 

Maximum Ratings and Characteristics

1. Drain-Source-Voltage : V DS = 450 V

2. Continous Drain Current : I D = 10 A

3. Pulsed Drain Current : I D(puls) = 40 A

4. Gate-Source-Voltage : V GS = ±30 V

5. Repetitive or Non-Repetitive (Tch < 150°C) : I AR = 10 A

6. Avalanche Energy : E AS = 86,2 mJ

7. Max. Power Dissipation : P D = 50 W

2 page
K2638 transistor pinout

Applications:

1. Switching Regulators

2. UPS

3. DC-DC converters

4. General Purpose Power Amplifier

K2638 PDF Datasheet


 

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