Transistor archives - Page 776 of 2673

Description

The BDX93 is Bipolar NPN Device in a Hermetically sealed TO-3 Metal package.

Bipolar NPN Device. VCEO = 80V, IC = 8A

Absoulte Maximum Ratings ( Ta=25°C )

1. Collector-Base Voltage: Vcbo = 80 V

2. Collector-Emitter Voltage: Vceo = 80 V

3. Emitter-Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 8 A

5. Collector Power Dissipation: Pd = 90 W

Applications:

1. Designed for use in general purpose power amplifier and switching applications

Other data sheets are available within the file: BDX91, BDX95

Part Number: 2N6111

Function: Complementary Silicon Plastic Power PNP Transistor

Package: TO-220 Type

Image and Pinouts:

2N6111 datasheet

Description

These devices are designed for use in general−purpose amplifier and switching applications.

1. High DC Current Gain

2. High Current Gain − Bandwidth Product

3. TO-220 Compact Package

4. These Devices are Pb−Free and are RoHS Compliant

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic =7 A

5. Total Power Dissipation: Pd = 40 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Ordering Information :

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

Other data sheets are available within the file: 2N6107, 2N6107G, 2N6109, 2N6109G