Transistor

PHD98N03LT Datasheet PDF – 25V, 75A, N-channel MOSFET

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Part Number: PHD98N03LT

Function: 25V, 75A, N-channel MOSFET

Package: SOT428 (D-PAK) Type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Image and Pinouts:

PHD98N03LT datasheet

 

Description

This is N-channel TrenchMOS logic level FET.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

1. Low on-state resistance

2. Fast switching.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 15 V

3. Drain current: ID = 75 A

4. Total Power Dissipation : Ptot = 111 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applicatiosn :

1. Computer motherboard high frequency DC to DC converters.

PHD98N03LT Datasheet PDF Download


PHD98N03LT pdf

Other data sheets are available within the file: 98N03LT, PHD98N03

30G120ASW Datasheet PDF -1200V, 30A, IGBT – APEC

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Part Number: 30G120ASW

Function: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Package: TO-3P Type

Manufacturer: Advanced Power Electronics Corp

Image:

30G120ASW image

Description

This is 1200V, 30A, N-Channel IGBT.

Features

1. High Speed Switching

2. Low Saturation Voltage : Typical V CE(sat) = 2.9V at Ic = 30A

3. RoHS-compliant, halogen-free TO-3P package

4. Internal “Co-Pak” Fast Recovery Diode

Pinouts:
AP30G120ASW datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Continuous Collector Current: Ic = 30 A (Tc = 100°C)

4. Maximum Power dissipation : Pd = 208 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

30G120ASW Datasheet PDF Download

AP30G120ASW pdf
Datasheet Download : [  AP30G120ASW-HF-3.PDF ]

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