BD140 Datasheet – 80V, 1.5A, PNP Power Transistor – NXP

Part Number: BD140

Function: -80V, -1.5A, PNP SILICON TRANSISTOR

Package: TO-126, SOT32 Type

Manufacturer: NXP, Philips

Image

bd140-pnp-transistor

Description

PNP power transistor in a TO-126; SOT32 plastic package.

NPN complements: BD135, BD137 and BD139.

Limiting Values

1. Collector-base voltage : Vcbo = -100V

2. Collector-emitter voltage : Vceo = -80V

3. Emitter-base voltage : Vceo = -5V

4. Collector current (DC) : Ic = -1.5A

Pinout

bd140-datasheet-pinout

 

Features

1. High current (max. 1.5 A)
2. Low voltage (max. 80 V).

Applications

General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.

 

BD140 Datasheet


 

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2N3866 Datasheet PDF – 30V, 0.4A, NPN Transistor

Part Number: 2N3866

Function: NPN SILICON HIGH FREQUENCY TRANSISTOR

Package: TO-39 Case Type

Manufacturer: Central Semiconductor

Image and Pinouts:

2N3866 datasheet

 

Description

The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 3.5 V

4. Collector Current: Ic = 0.4 A

5. Power Dissipation : Pc = 5 W

6. Junction Temperature: Tj = 200°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Other data sheets are available within the file: 2N3866A

 

2N3866 Datasheet PDF Download


2N3866 pdf