QN3109 Datasheet PDF – 30V, 154A, N-Channel MOSFET

Part Number: QN3109

Function : N-Channel 30V Fast Switching MOSFET

Package: PRPAK 5×6 Pin Type

Manufacturer: UBIQ Semiconductor

Image

QN3109 datasheet mosfet

Description

The QN3109 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The device meet the RoHS and Green Product requirement with full function reliability approved

Pinout

QN3109 pinout

Features

1. Advanced high cell density Trench technology
2. Super Low Gate Charge
3. Green Device Available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 29 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications

1. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
2. Networking DC-DC Power System
3. Load Switch

Other data sheets are available within the file: QN3109M6N

QN3109 Datasheet PDF

QN3109 pdf

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D468 Datasheet PDF – 20V, 1A, 0.9W, NPN Transistor

Part Number: D468

Function: 20V, 1.0A, 0.9W, NPN Transistor

Package: TO-92MOD Type

Manufacturer: Hitachi ( Renesas Electronics )

Images:
D468 datasheet

Description

This D468 is 20V, 1A, Silicon NPN Epitaxial Transistor.

Features

1. Low frequency power amplifier

2. Complementary pair with 2SB562

Pinout:

D468 transistor

Absolute Maximum Ratings

1. Collector to base voltage : VCBO = 25 V

2. Collector to emitter voltage : VCEO = 20 V

3. Emitter to base voltage : VEBO = 5 V

4. Collector current : IC = 1.0 A

5. Collector peak current : iC(peak) = 1.5 A

6. Collector power dissipation : PC = 0.9 W

7. Junction temperature : Tj = 150 °C

8. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: 2SD468

D468 Datasheet PDF


D468 pdf

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