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Features

1. Maintains both low power loss and low noise
2. Lower RDS(on) characteristic
3. More controllable switching dv/dt by gate resistance
4. Smaller VGS ringing waveform during switching
5. Narrow band of the gate threshold voltage (3.0±0.5V)
6. High avalanche durability

11N60E Pinout

Applications

1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters

Absolute Maximum Ratings at Tc=25°C

1. Drain-Source Voltage : Vds = 600 V
2. Continuous Drain Current : Id = 11 A
3. Maximum Power Dissipation: Pd = 65 W
4. Operating Temperature range : Tch = 150°C
5. Storage Temperature range : Tstg = -55 to +150°C

Other data sheets are available within the file: FMV11N60E

This is one of the PNP transistor types.

Part Number: B817, 2SB817

Function: – 140V, – 12A, Silicon PNP transistor

Package: TO-3P Type

Manufacturer: Sanyo Semicon Device

B817 transistor Image and pinouts :

B817 Transistor

Description

The descriptions in parentheses are for the B817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047.

For 60W audio frequency amplifier output stage, Complementary to 2SD1047.

Features

1.Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).

2. Wide ASO because of on-chip ballast resistance.

3. Good depenedence of fT on current and excellent high frequency responce.

4. 140V / 12A / AF 60W Output Applications

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = – 160 V
2. Collector-to-Emitter Voltage : VCEO = – 140 V
3. Emitter-to-Base Voltage : VEBO = – 6 V
4. Collector Current : IC = – 12 A
5. Collector Current (Pulse) : ICP = – 15 A
6. Collector Dissipation : PC = 100 W

Transistor

11N60E Datasheet PDF – 600V, 11A, N-Ch, MOSFET

Description

Features

11N60E Datasheet PDF Download

B817 Transistor – (-)140V, (-)12A, Silicon PNP – Sanyo

Description

B817 Datasheet

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