Part Number: K40T120

Function: 1200V, 40A, IGBT

Package: TO-247 Pin Type

Manufacturer: Infineon Technologies

Images:

Description

The K40T120 is 1200V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.

The hard-switching TRENCHSTOP IGBT co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept.

The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Pinout:

Features

1. Lowest VCEsat drop for lower conduction losses

2. Low switching losses

3. Easy parallel switching capability due to positive temperature coefficient in VCEsat

4. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

5. High ruggedness, temperature stable behavior

6. Low EMI emissions

7. Low gate charge

8. Very tight parameter distribution

Applications:

1. Highest efficiency – low conduction and switching losses

2. Comprehensive portfolio in 600 V and 1200 V for flexibility of design

3. High device reliability

Other data sheets are available within the file: IKW40T120

K40T120 Datasheet PDF

 

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