This is one of the IGBT types.
This part name is 30J124, GT30J124.
The package is TO-220SIS.
This product has Discrete 600V, 200A, IGBT functions.
The manufacturer of the product is Toshiba.
Image:
Some of the text files within the PDF file :
Description
30J124 is 600V, Silicon N Channel IGBT. Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
1. Fourth-generation IGBT
2. Enhancement mode type
Ordering Informations :
Applications:
1. High Power Switching
2. Fast Switching
Datasheet 30J124 PDF Download :
Other data sheets are available within the file: GT30J124
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