Transistor

IRFP360 Datasheet PDF – 400V, 23A, HEXFET MOSFET

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Part Number: IRFP360

Function: HEXFET Power MOSFET

Package: TO-247AC Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image

IRFP360 HEXFET MOSFET

 

Description

This is 400V, 23A, HEXFET MOSFET.

Third Generation HEXFETs from international Rectifier Provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 device

Pinouts:

IRFP360 datasheet

 

Feature :

1. Dynamic dv/dt Rating
2. Repetitive Avalanche Rated
3. Isolated Central Mouting Hole
4. Fast Switching
5. Ease of Paralleling
6. Simple Drive Requiremnets

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 23 A (Tc = 25°C)
4. Power Dissipation: Pd = 280 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

IRFP360 Datasheet PDF Download


IRFP360 pdf

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B772P Datasheet – PNP Silicon Power Transistor – NEC

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Part Number: B772P, 2SB772

Function: -30V, -3A, PNP SILICON POWER TRANSISTOR

Package: TO-126 Type

Manufacturer: NEC

Image:
B772P image

Description

The B772P is PNP silicon transistor suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC converter and relay driver.

A PNP transistor is a type of bipolar junction transistor (BJT) that has a “positive-negative-positive” (PNP) configuration.

The term “PNP” refers to the polarities of the three regions in the transistor: the P-type base, the N-type collector, and the P-type emitter.

Features

1. Low saturation voltage

2. Excellent hFE linearity and high hFE

3. Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.

Pinouts:

B772P datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V

2. Collector to Emitter Voltage: Vceo = – 30 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 3 A

5. Collector Dissipation : Pc =1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

B772P Datasheet PDF


 

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