Transistor

S8050 PDF Datasheet – 20V, 700mA, NPN Transistor – UTC

Posted on by pinout

Part Number: S8050

Function: Low voltage high current small signal NPN transistor

Package: TO-92 Type

Manufacturer: Unisonic Technologies

Image and pinout :

S8050 datasheet pinout

Description

The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

Features

1. Collector current up to 700mA
2. Collector-Emitter voltage up to 20 V
3. Complementary to S8550

Absolute maximum ratings ( Ta=25°C )

1. Collector-Base Voltage : VCBO = 30 V
2. Collector-Emitter Voltage : VCEO = 20 V
3. Emitter-Base Voltage : VEBO = 5 V
4. Collector Current : IC = 700 mA
5. Collector Dissipation(TA=25°C) : PC = 1 W
6. Junction Temperature : TJ = 150 °C
7. Storage Temperature : TSTG = -65 ~ +150 °C

S8050 Datasheet

S8050 pdf

Related articles across the web

RJP30H1DPD Datasheet PDF – 360V, 30A, N-Ch, IGBT

Posted on by pinout

Part Number: RJP30H1DPD

Function: 360V, 30A, N-Channel IGBT

Package: TO-252 Type

Manufacturer: Renesas Electronics

Image

rjp30h1dpd-igbt

 

Description

This is 360V, 30A, Silicon N-Channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

 

Pinouts:

RJP30H1DPD datasheet

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Collector dissipation : Pc = 40 W

5. Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30H1DPD Datasheet

Applications:

1. High speed power switching

RJP30H1DPD Datasheet PDF


 

Related articles across the web