Transistor archives - Page 843 of 2673

Features

1. Low ON-state resistance.
2. Converters.
3. Ultrahigh-speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 50 A
4. Allowable Power Dissipation: Pd = 100 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Applications:

Ultrahigh-Speed Switching

Part Number: P6NA60FI

Function: 600V, 3.9A, N-Channel MOSFET

Package: TO-220, ISOWATT220 Type

Manufacturer: STMicroelectronics

Pinouts:

P6NA60FI datasheet

Description

THIS IS 600V, 3.9A, N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR.

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.

components

Absolute Maximum Ratings

1. Drain-source Voltage (VGS = 0) : VDS = 600 V

2. Drain-gate Voltage (RGS = 20 kW): VDGR = 600 V

3. Gate-source Voltage : VGS = ± 30 V

4. Drain Current (continuous) at Tc = 25°C : ID = 3.9 A

5. Drain Current (continuous) at Tc = 100 °C : ID = 2.6 A

6. Total Dissipation at Tc = 25 °C : Ptot = 45 W

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWERSUPPLIES (SMPS)

3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Other data sheets are available within the file: P6NA60, TP6NA60, STP6NA60FI

Transistor

2SK1422 MOSFET – 60V, 50A, Transistor ( Datasheet PDF )

Description

Features

2SK1422 Datasheet PDF Download

P6NA60FI Datasheet PDF – 600V, 3.9A, N-Ch, MOSFET – ST

Description

P6NA60FI Datasheet PDF Download