2N6296 Datasheet – 60V, 4A, PNP Darlington Transistor

Part Number: 2N6296

Function: 60V, 4A, COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR

Package: TO-66 Case

Manufacturer: Central Semiconductor

Image and Pinouts:

2N6296 datasheet

 

Description

The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications.

Maximum Ratings

1. Collector-Base Voltage : VCBO = 60 V
2. Collector-Emitter Voltage : VCEO = 60 V
3. Emitter-Base Voltage : VEBO = 5.0 V
4. Continuous Collector Current : IC = 4.0 A
5. Peak Collector Current : ICM = 8.0 A
6. Continuous Base Current : IB = 80 mA
7. Power Dissipation : PD = 50 W

Other data sheets are available within the file: 2N6294, 2N6295, 2N6297

2N6296 Datasheet PDF Download

2N6296 pdf


 

MRF175GV Datasheet PDF – RF Power Push Pull MOSFET

Part Number: MRF175GV

Function: RF POWER FIELD-EFFECT TRANSISTOR

Package: CASE 375–04, STYLE 2

Manufacturer: ASI ( Advanced Semiconductor )

Image and Pinouts:

MRF175GV datasheet

 

Description

This 65V, 26A, N-Channel MOSFET.

The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

Maximum Ratings

1. Drain current : Id = 26A
2. Drain to source voltage : Vdss = 65 V
3. Pdiss = 400 W

MRF175GV Datasheet PDF Download

MRF175GV pdf

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