Transistor

2SA1273 Datasheet – 30V, 2A, PNP Transistor – KEC

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Part Number: 2SA1273

Function: -2A, -30V, Silicon PNP Transistor

Package: TO-92 Type

Manufacturer: KEC

Image and Pinouts:

2SA1273 datasheet

Description

This 2SA1273 is 30V, 2A, Silicon PNP Transistor.

Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).

Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.

Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.

1. Complementary to 2SC3205 and 3 Watts Output Applications.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = -30 V
2. Collector to Emitter Voltage: Vceo = – 30 V
3. Emitter to Base Voltage: Vebo = -5 V
4. Collector Current: Ic = -2 A
5. Total Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Audio Power Amplifier

Other data sheets are available within the file: A1273

2SA1273 Datasheet PDF Download

2SA1273 pdf


 

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FQB5N20L Datasheet – 200V, N-Ch, MOSFET, Transistor

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Part Number: FQB5N20L

Function: 200V, 4.5A, N-Channel MOSFET

Package: D2PAK Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:
FQB5N20L datasheet

Description

This is 200V, 4.5A, LOGIC N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Features

1. 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V

2. Low gate charge ( typical 4.8 nC)

3. Low Crss ( typical 6.0 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7. Low level gate drive requirement allowing direct operation from logic drivers

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 4.5 A (Tc = 25°C)

4. Power Dissipation: Pd = 3.13 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: FQB5N20LTM, FQI5N20L

FQB5N20L Datasheet PDF Download


FQB5N20L pdf