Transistor

PMBT4401 Datasheet PDF – 40V, 600mA, NPN Transistor

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Part Number: PMBT4401

Marking : *2X

Function: 40V, NPN switching transistor

Package: SOT-23 Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

PMBT4401 datasheet

 

Description

The PMBT4401 is NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT4403.

Features

1. High current (max. 600 mA)
2. Low voltage (max. 40 V).

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 40 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 600 mA
5. Total Power Dissipation : Ptot = 250 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

1. Industrial and consumer switching

 

PMBT4401 Datasheet PDF Download


PMBT4401 pdf

Other data sheets are available within the file: PMBT-4401

FQB5N20L Datasheet – 200V, N-Ch, MOSFET, Transistor

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Part Number: FQB5N20L

Function: 200V, 4.5A, N-Channel MOSFET

Package: D2PAK Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:
FQB5N20L datasheet

Description

This is 200V, 4.5A, LOGIC N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Features

1. 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V

2. Low gate charge ( typical 4.8 nC)

3. Low Crss ( typical 6.0 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7. Low level gate drive requirement allowing direct operation from logic drivers

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 4.5 A (Tc = 25°C)

4. Power Dissipation: Pd = 3.13 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: FQB5N20LTM, FQI5N20L

FQB5N20L Datasheet PDF Download


FQB5N20L pdf