Transistor

FF900R12IP4 Datasheet PDF – 1200V, 900A, IGBT Module

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Part Number: FF900R12IP4

Function: IGBT / VCES= 1200V, 900A

Package: Module Type

Manufacturer: Infineon Technologies

Image:

FF900R12IP4 datasheet

Description

This is 1200V, 900A, IGBT. The IGBT is insulated-gate bipolar transistor.

PrimePACK 2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Typical Applications:

• Auxiliary Inverters
• High Power Converters
• Motor Drives
• Traction Drives
• UPS Systems
• Wind Turbines

Pinout

components

Electrical

Features

• Extended Operation Temperature Tvj op
• High Short Circuit Capability, Self Limiting Short Circuit Current
• Unbeatable Robustness

Mechanical

Features

• 4 kV AC 1min Insulation
• High Creepage and Clearance Distances
• High Power and Thermal Cycling Capability

Other data sheets are available within the file: FF900R12IP4BOSA2

 

FF900R12IP4 Datasheet PDF Download


FF900R12IP4 pdf

2SA940 Datasheet PDF – 150V, 1.5A, PNP Transistor

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Part Number: 2SA940

Function: -150V, -1.5A, PNP Transistor

Package: TO-220 Type

Manufacturer: Wing Shing International Group

Image and Pinouts:

2SA940 datasheet

Description

This is -150V, -1.5A, Silicon Epitaxial PNP Transistor.

Features

1. Epitaxial Silicon Transistor
2. Complementary to 2SC2073

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 150 V
2. Collector to Emitter Voltage: Vceo = – 150 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 1.5 A
5. Total Dissipation : Pc = 25 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

components

Applications

1. Power amplifier vertical deflection output.

Other data sheets are available within the file: A940

2SA940 Datasheet PDF Download

2SA940 pdf


 

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