Transistor

D1347 Datasheet PDF – 50V, 3A, NPN Transistor – Sanyo

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Part Number: D1347

Function: 3A, 50V, Silicon NPN Transistor

Package: TO-92 Type

Manufacturer: SANYO (Panasonic)

Images:

components

Description

The D1347 is 50V, 3A, NPN Epitaxial Planar Silicon Transistor.

Features

1. Adoption of FBET, MBIT processes.

2. Low saturation voltage.

3. Large current capacity and wide ASO.

Pinouts:

D1347 datasheet

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 60 V
2. Collector-to-Emitter Voltage : VCEO = 50 V
3. Emitter-to-Base Voltage : VEBO = 6 V
4. Collector Current : IC = 3 A
5. Collector Current (Pulse) : ICP = 6 A
6. Collector Dissipation : PC = 1 W
7. Junction Temperature: Tj = 150°C
8. Storage Temperature : Tstg = – 55 to +150°C

Applications:

1. Power supplies, relay drivers

2. Lamp drivers, electrical equipment.

Other data sheets are available within the file: 2SB985, 2SD1347, B985

D1347 Datasheet PDF Download


D1347 pdf

2SH20 Datasheet PDF – 600V, 36A, N-Ch, IGBT – Hitachi

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Part Number: 2SH20

Function: 36A, 600V, Silicon N-Channel IGBT

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

2SH20 datasheet

 

Description

The 2SH20 is 600V, 36A, N-Channel IGBT.

An N-Channel IGBT, or Insulated Gate Bipolar Transistor, is a type of power transistor that combines the high-speed switching capabilities of a MOSFET with the low on-state resistance of a bipolar transistor. It is commonly used in high-power applications such as motor control, power supplies, and lighting.

The N-Channel IGBT is capable of switching large amounts of current with high speed and efficiency, making it ideal for applications that require high power output.

Features

1. High speed switching
2. Low on saturation voltage

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 600 V
2. Gate to emitter voltage : VGES = ±20 V
3. Collector current : IC = 36 A
4. Collector peak current : ic(peak) = 60 A
5. Collector dissipation : PC = 100 W
6. Channel temperature : Tj = 150 °C
7. Storage temperature: Tstg = – 55 to +150 °C

components

Applications

1. High speed power switching

Other data sheets are available within the file: SH20

2SH20 Datasheet PDF Download


2SH20 pdf