7N60 Datasheet PDF – 600V, 7.4A, N-Ch, Power MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 7N60

Function: 7.4A, 600V, N-CHANNEL MOSFET

Package: TO-220AB, TO-263

Manufacturer: Unisonic Technologies

Images:

7N60 mosfet transistor

 

Description

The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

Pinout

7N60 pinout datasheet

Features

1. RDS(ON) < 1.0Ω @ VGS = 10V
2. Fast Switching Capability
3. Avalanche Energy Tested
4. Improved dv/dt Capability, High Ruggedness

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7.4 A
4. Single pulse avalanche energy : Eas = 530 mJ
5. Avalanche curren : Iar = 7.4 A
7. Repetitive avalanche energy : Ear = 54 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C

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7N60 Datasheet

7N60

BD699 Datasheet PDF – 8A, 80V, NPN Transistor

Part Number: BD699

Function: 80V, 8A, Plastic Medium-Power NPN Transistor

Package: Case 199_04 Type

Manufacturer: Unspecified

Image and Pinouts:
BD699 datasheet

Description

This is 8.0 Ampere Darlington Power NPN Silicon Transistor.

Features

1. High DC Current Gain – hFE = 750(Min) @ Ic = 3.0 and 4.0 Adc

2. Monolithic Construction.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 Vdc
2. Collector to Emitter Voltage: Vceo = 60 Vdc
3. Emitter to Base Voltage: Vebo = 5.0 Vdc
4. Collector Current: Ic = 8.0 Adc
5. Total Dissipation: Pd = 70 Watt
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

components

Other data sheets are available within the file: BD695A, BD697, BD697A, BD699A

BD699 Datasheet PDF Download


BD699 pdf

 

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