Transistor

H15R1203 PDF Datasheet – 1200V, 15A, IGBT, Transistor

Posted on by pinout

This post explains for the IGBT.

The Part Number is IHW15N120R3.

The Marking is H15R1203.

The function of this semiconductor is 1200V, 15A, IGBT.

The package is TO-247-3 type

Manufacturer: Infineon Technologies

Preview images :

H15R1203 pdf datasheet

Description

H15R1203 is 1200V, 15A, Reverse conducting IGBT with monolithic body diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Powerful monolithic body diode with low forward voltage designed for soft commutation only

2. TRENCHSTOPTM technology applications offers:

(1) Very tight parameter distribution

(2) High ruggedness, temperature stable behavior

(3) Low VCEsat

(4) Easy parallel switching capability due to positive temperature coefficient in VCEsat

3. Low EMI

4. Qualified according to JESD-022 for target applications

5. Pb-free lead plating; RoHS compliant

H15R1203 igbt equivalent

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 15 A (Tc = 100°C)

4. Collector dissipation : Ptot = 254 W (Tc = 25°C)

5. Junction temperature : Tj = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. Inductive cooking

2. Inverterized microwave ovens

3. Resonant converters

4. Soft switching applications

H15R1203 PDF Datasheet

Posts related to ‘ IGBT ‘

Part number Description
30G124 430V, 200A, IGBT – GT30G124
RJP30E2 RJP30E2DPK-M0, 360V, 35A, IGBT
20N60A4D 600V, 70A, N-channel IGBT ( PDF )
GP20B60PD 600V, 40A, IGBT – IR ( PDF )
RJP3045 360V, 35A, N-ch, IGBT – Renesas
IRG4PC50UD 600V, 55A, IGBT, Transistor
DG302 330V, 250A, IGBT, Transistor, MOSFET
2SH20 600V, 36A, N-Ch, IGBT – Hitachi
FGA25N120AN 1200V, IGBT – Fairchild
GAE100BA60 600V, 100A, IGBT, Transistor

 

D2581 PDF Datasheet – 1500V, 10A, NPN Transistor, 2SD2581

Posted on by pinout

This post explains for the transistor.

The Part Number is D2581, 2SD2581.

The function of this semiconductor is 1500V, 10A, NPN Transistor.

The package is TO-3PML Type

Manufacturer: Sanyo Semicon Device

Preview images :

1 page
D2581 pdf pinout

Description

The D2581 is 1500V, 10A, NPN Triple Diffused Planar Silicon Transistor. This is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Features

1. High speed.

2. High breakdown voltage (VCBO=1500V).

3. High reliability (Adoption of HVP process).

4. Adoption of MBIT process

 

2 page
D2581 datasheet 2SD2581

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application:

1. Color TV Horizontal Deflection Output

D2581 PDF Datasheet