This post explains for the IGBT.
The Part Number is IHW15N120R3.
The Marking is H15R1203.
The function of this semiconductor is 1200V, 15A, IGBT.
The package is TO-247-3 type
Manufacturer: Infineon Technologies
Preview images :
H15R1203 is 1200V, 15A, Reverse conducting IGBT with monolithic body diode.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
1. Powerful monolithic body diode with low forward voltage designed for soft commutation only
2. TRENCHSTOPTM technology applications offers:
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior
(3) Low VCEsat
(4) Easy parallel switching capability due to positive temperature coefficient in VCEsat
3. Low EMI
4. Qualified according to JESD-022 for target applications
5. Pb-free lead plating; RoHS compliant
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1200 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 15 A (Tc = 100°C)
4. Collector dissipation : Ptot = 254 W (Tc = 25°C)
5. Junction temperature : Tj = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
1. Inductive cooking
2. Inverterized microwave ovens
3. Resonant converters
4. Soft switching applications
H15R1203 PDF Datasheet
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