Transistor archives - Page 964 of 2673

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Pinout

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Other data sheets are available within the file: IRF540NL, IRF540NS ( D2Pak )

This is one of the transistor types.

Part Number: 13007

Function: 700V, 8A, NPN Transistor

Package: TO-220 Type

Manufacturer: Elite

See the preview image and the PDF file for more information.

Images:

13007 transistor

Description

This is NPN Epitaxial Silicon Transistor.

This transistor is mainly designed for high voltage and high speed applications but it can also be used for amplification purposes.

13007 transistor pinout

13007 pinout datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 8 A
5. Total Dissipation : Pc = 80 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

[…]

Replacement and Equivalent :

ST13007, BUJ105A, BUJ105AX, 2SC2335, 2SC2553, MJE13006, MJE15020, KSE13007, TE13007, KSE13006.

Transistor

F540NL Datasheet – 100V, 33A, MOSFET – IR ( PDF )

Description

F540NL Datasheet PDF Download

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13007 Transistor – 700V, 8A, NPN, MJE13007 ( PDF )

Description

13007 Transistor Datasheet

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