Transistor

RJP3043 Datasheet – IGBT 330V 50A – Renesas ( PDF )

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Part Number: RJP3043

Package : TO 3P Type

Function: N Channel IGBT 330V 50A

Manufacturer: Renesas

Image:

RJP3043

Description

This is 330V, 50A, IGBT.

Ucemax=360…380 V
Ucesat=1,5 V (Ic=16A)
Pdmax=120W (approx.)
Uge(th)=4V
Qg=25 nC (Uge=12V)
Qgc=9 nC
tdon=10 ns (approx.)
tdoff=20 ns (approx.)
Eoff= 1 mJ (approx.) (Ic=16A, Uce=200V)

Features

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES = 1 μA max

Pinout
RJP3043 pinout

RJP3043 Datasheet


 

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BC813C Datasheet PDF – 20V, 100mA, PNP Transistor, TO-92

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Part Number: BC813C

Function: 20V, 100mA, PNP Transistor

Package: TO-92 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

BC813C datasheet

 

Description

This is 20V, 100mA, PNP Epitaxial Silicon Transistor.

Features

1. This device is designed for general purpose amplifier application at collector currents to 800mA.

2. Sourced from process 38.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Junction Temperature: Tj = 150°C

6.. Storage Temperature: Tsg = -55 ~ +150°C

 

Other data sheets are available within the file: BC813

 

BC813C Datasheet PDF Download


BC813C pdf

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