Part Number: K12A50D, TK12A50D
Function: 500V, 12A, N-Channel MOSFET
Package: TO-220 type
Manufacturer: Toshiba
See the preview image and the PDF file for more information.
This is one of the types of MOSFETs and is a kind of transistor.
Image:
Description
This is 500V, 12A, Silicon N Channel MOS Type Field Effect Transistor.
Features
• Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K12A50D Pinout :
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 364 mJ
6. Avalanche curren : Iar = 12 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications:
K12A50D Datasheet
