TIP41C Datasheet – 100V, 6A, NPN Transistor, TO-220

Part Number: TIP41C

Function: 100V, 6A, NPN Transistor

Package: TO-220 Type

Manufacturer: ON Semiconductor

TIP41C Pinout

TIP41C datasheet




A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.


• Epoxy Meets UL 94 V−0 @ 0.125 in

• These Devices are Pb−Free and are RoHS Compliant


Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 100 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 6 A

5. Total Dissipation : Pc = 65 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C



1. General purpose amplifier and switching

Other data sheets are available within the file: TIP41 ,TIP41AG, TIP41BG, TIP41CG

TIP41C Datasheet PDF Download

TIP41C pdf


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