Fairchild

SMBJ30A Datasheet PDF – 30V, 600W, TVS Diode – Fairchild

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Part Number: SMBJ30A

Function: 30 V, 600 Watt TVS Diode, Rectifier

Package: SMB / DO-214AA

Manufacturer: Fairchild Semiconductor

Images:
SMBJ30A datasheet

Description

This is 30V, 600W, Transient Voltage Suppressor.

1. Glass-Passivated Junction

2. 600W Peak Pulse Power Capability on 10 / 1000 us Waveform.

3. Excellent Clamping Capability.

4, Low-Incremental Surge Resistance.

 

Absolute Maximum Ratings

1. PPPM : Peak Pulse Power Dissipation on 10/1000 μs Waveform = 600 W

2. IPPM : Peak Pulse Current on 10/1000 μs Wavefom = See Table A

3. IFSM : Non-Repetitive Peak Forward Surge Current Superimposed on Rated Load = 100 A

4. TSTG Storage Temperature Range = -55 to 150 °C

 

Applications:

TVS devices are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications.

 

Other data sheets are available within the file: SMBJ100CA, SMBJ10A, SMBJ10CA, SMBJ110A, SMBJ110CA

SMBJ30A Datasheet PDF Download


SMBJ30A pdf

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IRF740 PDF – 400V, N-Ch, MOSFET, Transistor ( Datasheet )

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This post explains for the MOSFET.

Part Number: IRF740

Function: 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor Corporation, a semiconductor manufacturing company, was acquired by ON Semiconductor Corporation on September 18, 2016.

See the preview image and the PDF file for more information.

IRF740 pinout

IRF740 datasheet

Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

• 10A, 400V
• rDS(ON) = 0.550Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics

Pinouts:

components

Advantages:

1. The IRF740 has a low on-resistance, which means it can handle high power and reduce power loss.

2. Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.

3. It has a high voltage rating compared to the IRF640, making it suitable for high-voltage applications.

4. It is suitable for use in a wide range of electronic circuits, making it a versatile component in electronics design.

Other data sheets are available within the file: IRF740B

IRF740 Datasheet PDF

IRF740 pdf

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