G4PC50UD Datasheet PDF – 600V, 27A, UltraFast IGBT – IR

Part Number: G4PC50UD, IRG4PC50UD

Function : 600V, 27A, IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image

g4pc50ud-igbt

Description

This is 600V, 27A, UltraFast CoPack IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

4. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

 

Pinout

g4pc50ud-datasheet-pinout

 

Benefits

1. Generation 4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 27 A (Tc = 100°C)

4. Maximum Power dissipation : Pc = 200 W (Tc = 25°C)

5. Operating Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PC50UD Datasheet PDF


 

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IRF3710 Pinout – Vdss=100V, Power MOSFET – IRF

Part Number: IRF3710

Function: HEXFET Power MOSFET ( Vdss=100V, Id=57A )

Package: TO-220AB Pin Type

Manufacturer: International Rectifier

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF3710 Pinout

IRF3710 pinout

 

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 57 A
4. Total Power Dissipation: Pd = 200 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C

 

IRF3710 Datasheet


 

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