K4106 PDF Datasheet – 500V, 12A, MOSFET – 2SK4106

This post explains for the semiconductor 2SK4106.

The Part Number is K4106.

The function of this semiconductor is 500V, MOSFET.

Manufacturer: Toshiba

Preview images :

K4106 pdf pinout

Description

The K4106 is 500V, 12A, Silicon N Channel MOS Type Field Effect Transistor.

Features

• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K4106 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain Power Dissipation: Pd =  45 W (Tc = 25°C)

5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4106 PDF Datasheet

HY1607P PDF – 68V, 70A, N-Ch, MOSFET, Transistor

Part Number: HY1607P

Function: 68V, 70A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: HOOYI Semiconductor

Images:

HY1607P datasheet pdf

Description

HY1607P is 68V, 70A, N-Channel Enhancement Mode MOSFET. 

Features

1. 68V, 70A : RDS(ON) = mW (typ.) @ VGS =10V

2. 100% avalanche tested

3. Reliable and Rugged

4. Lead Free andGreenDevicesAvailable (RoHS Compliant)

Pinouts:

HY1607P pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 68 V

2. Gate to source voltage: VGSS = ± 25

3. Drain current: ID = 70 A

4. Maximum Power Dissipation: Pd = 160 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. Switching application

2. Power Management for Inverter Systems.

HY1607P PDF Datasheet