This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3667, 2SK3667
Function: 600V, 7.5A, N-Channel MOSFET ( Transistor )
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
The K3667 is 600V, 7.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).
This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Features
1. Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
2. High forward transfer admittance: |Yfs| = 5.5S (typ.)
3. Low leakage current: IDSS = 100μA (VDS = 600 V)
4. Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7.5 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 189 mJ
6. Avalanche curren : Iar = 7.5 A
7. Repetitive avalanche energy : Ear = 4.5mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K3667 PDF Datasheet
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