LA4440 PDF Datasheet – 2-Channel, Power Amplifier

Part Number: LA4440, LA4440J-K-E

Function: 6W, 2-Channel, Bridge 19W Power Amplifier

Package: SIP14H

Manufacturer: ON Semiconductor

Images:

LA4440 Power Amplifier

Description

The LA4440 is 2-Channel, Power Amplifier. An audio power amplifier is an electronic amplifier that amplifies low-power audio signals (signals from a microphone, instrument, or other audio source) to a level suitable for driving loudspeakers or headphones. The main purpose of an audio power amplifier is to increase the power of an audio signal, so that it can be used to drive a loudspeaker and produce sound at a higher volume.

LA4440 pdf datasheet

Features

1. Built-in 2 channels (dual) enabling use in stereo and bridge amplifier applications.

(1) Dual : 6W x 2 (typ)

(2) Bridge : 19W (typ)

2. Minimum number of external parts required.

3. Small pop noise at the time of power supply ON/OFF and good starting balance.

4. Good ripple rejection : 46dB (typ)

5. Good channel separation.

6. Small residual noise (Rg=0).

7. Low distortion over a wide range from low frequencies to high frequencies.

8. Easy to design radiator fin.

9. Built-in audio muting function.

10. Built-in protectors.

a. Thermal protector

b. Overvoltage, surge voltage protector

c. Pin-to-pin short protector

LA4440 PDF Datasheet

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K3565 PDF Datasheet – 900V, 5A, N-Ch, MOSFET – 2SK3565

The 2SK3565 is one of the MOSFET types..

The Part Number is K3565, 2SK3565.

The function of this semiconductor is 900V, 5A, N-Channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page
K3565 mosfet pinout

Description

K3565 is 900V, 5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.)

• High forward transfer admittance: |Yfs| = 4.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 720 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

K3565 transistor pdf datasheet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 900 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 45 W

5. Single pulse avalanche energy : EAS = 595 mJ

6. Avalanche current : IAR = 5 A

7. Repetitive avalanche energy (Note 3) : EAR = 4.5 mJ

8. Channel temperature: Tch = 150 °C

 

 

Applications:

1. Switching Regulator

K3565 PDF Datasheet


 

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