D83-004 Diode – 30A, 40V, Rectifier ( ESAD83-004 )

Part Number: D83-004, ESAD83-004

Function: 30A, 40V, Diode, Rectifier

Package: TO-247 type

Manufacturer: Fuji Electric

Images:

D83-004 diode rectifier

Description

D83-004 is 30A, 40V, Schottky Barrier Diode. A Schottky barrier diode, also known as a Schottky diode or Schottky rectifier, is a type of semiconductor diode that has unique characteristics compared to conventional PN-junction diodes. It is named after the German physicist Walter H. Schottky, who made significant contributions to semiconductor physics.

 

Features

1. Low Vf

2. Super high speed switching

3. High reliability by planer design.

 

1 page
D83-004 pdf diode

 

Absolute Maximum Ratings :

1. Repetitive Peak Reverse Voltage : V rrm = 40 V

2. Non-Repetitive Peak Reverse Voltage : V rsm = 48 V

3. Average Output Current : I o = 30A

4. Surge Current : I fsm = 250A

5. Operating Junction Temperature: Tj = – 40 ~ + 125 °C

 

3 page
D83-004 datasheet rectifier

Applications:

1. High speed power switching

2. Power Rectification: They are used in power supplies and voltage clamping circuits where low forward voltage drop and high current capability are crucial.

3. Voltage Clamping: Schottky diodes are used in protection circuits to limit voltage spikes in electronic circuits.

4. High-Frequency Applications: Due to their fast switching speed and low capacitance, Schottky diodes are commonly used in RF and microwave applications.

D83-004 PDF Datasheet

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K3209 MOSFET – 150V, 25A, Transistor, PDF, Pinout, 2SK3209

Part Number: K3209, 2SK3209

Function: 150V, 25A, MOSFET

Package: TO–220FM Type

Manufacturer: Hitachi Semiconductor

Images:

1 page
K3209 pdf mosfet

Description

K3209 is 150V, 25A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low on-resistance : RDS =35mΩ typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

 

3 page
K3209 transistor datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 25 A

4. Channel dissipation: Pch = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Speed Power Switching

K3209 PDF Datasheet

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