30J124 Datasheet PDF – 600V, 200A, IGBT – Toshiba

This is one of the IGBT types.

This part name is 30J124, GT30J124.

The package is TO-220SIS.

This product has Discrete 600V, 200A, IGBT functions.

The manufacturer of the product is Toshiba.

Image:
30J124 replacement

Some of the text files within the PDF file :

Description

30J124 is 600V, Silicon N Channel IGBT. Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Fourth-generation IGBT

2. Enhancement mode type

Ordering Informations :

30J124 datasheet, GT30J124 datasheet

Applications:

1. High Power Switching

2. Fast Switching

Datasheet 30J124 PDF Download :

RJH30 pdf


 

Other data sheets are available within the file: GT30J124

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D2499 Datasheet PDF – 600V, 6A, NPN Transistor – Toshiba

This is one of the transistor types.

This part name is D2499, 2SD2499.

The package is TO-3P.

This product has Horizontal Deflection Output For Color TV functions.

The manufacturer of the product is Toshiba.

See the preview image and the PDF file for more information.

Image

D2499 transistor

Description

This is 600V, 6A, Silicon NPN Triple Diffused Mesa Type Transistor.

D2499 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

D2499 image

Features

1. High Voltage: Vcbo = 1500V

2. Low Saturation Voltage : Vce(sat) = 5V (Max.)

3. High Speed : tf = 0.3us (Typ.)

4. Built-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.

 

D2499 pinout

D2499 datasheet

MAXIMUM RATINGS (Tc = 25°C)

1. Collector-Base Voltage : VCBO = 1500 V

2. Collector-Emitter Voltage : VCEO = 600 V

3. Emitter-Base Voltage: VEBO = 5 V

4. Collector Current : DC IC = 6, Pulse ICP = 12

5. Base Current : IB = 3 A

6. Collector Power Dissipation : PC = 50 W

D2499 Datasheet PDF

D2499 pdf


 

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