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K3568 Datasheet PDF – 500V, 12A, N-Ch, MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3568

Function: 500V, 12A, N-Channel MOSFET

Package: TO-220FP-3 Type

Manufacturer: Toshiba

Image

K3568 image

Description

K3568 is 500V, 12A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.4 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3568 datasheet

Absolute Maximum Ratings (Ta = 25°C):

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain power dissipation : PD = 40 W

5. Single pulse avalanche energy : Eas = 364 mJ

6. Avalanche curren : Iar = 12 A

7. Repetitive avalanche energy : Ear = 4 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

Marking Information :

K3568 marking

Applications:

1. Switching Regulator

K3568 Datasheet PDF Download

K3568 pdf


 

Other data sheets are available within the file: 2SK3568

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C4544 PDF – 300V, 100mA, NPN Transistor – Toshiba

Posted on by pinout

This post explains for the transistor.

The Part Number is C4544, 2SC4544.

The function of this semiconductor is 300V, 100mA, NPN Transistor.

The package is TO-220 Type

Manufacturer: Toshiba

Preview images :

C4544 pinout datasheet

Description

The C4544 is 300V, 100mA, NPN Transistor.

A silicon NPN triple diffusion planar type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) constructed using silicon material and triple diffusion planar fabrication techniques. It is a three-terminal semiconductor device commonly used for amplification and switching applications in electronic circuits.

Here are some key features and characteristics of a silicon NPN triple diffusion planar type transistor:

NPN BJT: The transistor consists of an N-type emitter, a P-type base, and an N-type collector. It operates by controlling the current flow between the collector and emitter terminals through the application of a voltage at the base terminal.

Silicon Planar Technology: The transistor is constructed using silicon material and planar fabrication techniques. Planar technology involves the creation of multiple layers of semiconductors, insulators, and conductors on a flat surface, resulting in improved performance and manufacturability.

Triple Diffusion Process: The triple diffusion process refers to the creation of multiple doped regions through successive diffusion steps in the semiconductor material. This process allows for precise control over the doping concentrations and locations, enhancing the performance characteristics of the transistor.

[…]

Features:

• High voltage: V (BR) CEO = 300 V
• Small collector output capacitance: Cob = 3.0 pF (typ.)
• Collector metal (fin) is fully covered with mold resin.

C4544 transistor pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 300 V
2. Collector to Emitter Voltage: Vceo = 300 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 100 mA
5. Collector Dissipation: Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. High-Voltage Switching and amplifier
2. Color TV horiznotal drvier
3. color TV chroma output

C4544 Datasheet