Toshiba

TK30A06J3A Datasheet PDF – 60V, 30A, N-ch, MOSFET

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Part Number: TK30A06J3A

Function: 60V, 30A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image and Pinouts:

TK30A06J3A datasheet pinout

 

Description

This is 60V, 30A, Silicon N Channel MOSFET.

Features

1. Low drain-source ON-resistance: RDS (ON)= 19 mΩ(typ.)

2.  High forward transfer admittance: |Yfs| = 34 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 60 V)

4. Enhancement mode: Vth= 1.3 to 2.5 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 30 A

4. Drain Power Dissipation: Pd = 25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

TK30A06J3A characteristics

Applications

1. Switching Regulator

TK30A06J3A Datasheet PDF


TK30A06J3A pdf
Other data sheets are available within the file:  K30A06J3, TK30A06J3A

K117 Datasheet PDF – N-Channel FET, Vgds = -50V – Toshiba

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Part Number: K117, 2SK117

Function:  N-Channel FET ( Vgds = -50V, IG=10mA, Pd = 300mW )

Package: TO-92 Type

Manufacturer: Toshiba

Image

K117 image

Description

The K117 is -50V, 10mA, N-Channel MOSFET.

Features

1. High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0)

2. High breakdown voltage: VGDS= −50 V

3. Low noise: NF = 1.0dB (typ.)  (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)

4. High input impedance: IGSS= −1 nA (max) (VGS= −30 V)

 

Pinout

K117 datasheet pinout

Maximum Ratings

1. Gate-drain voltage : VGDS =  −50 V

2. Gate current : IG = 10 mA

3. Drain power dissipation : PD = 300 mW

4. Junction temperature : Tj  = 125 °C

5. Storage temperature range : Tstg = −55~125 °C

Applications:

1. Low Noise Audio Amplifier

K117 Datasheet PDF


 

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