Part Number: K7A60W, TK7A60W
Function : 600V, 7A, N-ch, MOSFET
Package: TO-220SIS Type
Manufacturer: Toshiba
Image
Description
This is 600V, 7A, Silicon N-Channel MOSFET.
Features
1. Low drain-source on-resistance: RDS(ON) = 0.5 Ω(typ.) by used to Super Junction Structure : DTMOS
2. Easy to control Gate switching
3. Enhancement mode: Vth= 2.7 to 3.7 V (V DS = 10 V, ID = 0.35 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7 A
4. Power Dissipation: Pd = 30 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
K7A60W Datasheet
