D2586 PDF Datasheet – 600V, 5A, NPN, Transistor, 2SD2586

This post explains for the transistor.

Part Number: D2586, 2SD2586

Function: 600V, 5A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba


D2586 datasheet



The D2586 is 600V, 5A, NPN Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.



1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 5 V (Max.)

3. High Speed : tf = 0.3 µs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.


D2586 transistor pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo =5 V

4. Collector Current: Ic = 5 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


D2586 replacement



D2586 PDF Datasheet


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