This is one of the types of MOSFETs and is a kind of transistor.
Part Number: HY4008
Function: 80V, 200A, N-Channel Enhancement Mode MOSFET (Transistor)
Package: TO-247, TO-3P Type
Manufacturer: Xi’an Hooyi Semiconductor Technology
Image
Description
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), HY4008 transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Features
1. 80V/200A, RDS(ON)= mW (typ.) @VGS=10V
2. 100% avalanche tested
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHSCompliant)
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 80 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 200 A
4. Drain power dissipation : PD = 397 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications
1. Power Management for Inverter Systems.
2. Switching application
Other data sheets are available within the file: HY4008W, HY4008A
HY4008 Datasheet PDF Download
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